Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A charge sheet model for MOSFETs with an abrupt retrograde channel - Part I. Drain current and body charge
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 46, no 12, 2209-2216 p.Article in journal (Refereed) Published
Abstract [en]

Analytical solutions to drain current, depletion and inversion charges for MOSFETs with an ideally abrupt retrograde doping profile in the channel are derived based on the charge sheet model. The validity of the analytical solutions is confirmed by comparing the modeling results with simulation data obtained using numerical calculations; the modeling and simulation results are in excellent agreement. It is shown that the inclusion of an intrinsic surface layer in the channel causes a voltage shift in the drain current, in accordance with experimental observations. For the depletion charge, an analytical expression principally identical to that for the uniformly doped body case is found with a simple replacement of the surface potential, psi(s), by the potential at the interface between the intrinsic surface layer and the doped substrate, psi(xi).

Place, publisher, year, edition, pages
2002. Vol. 46, no 12, 2209-2216 p.
Keyword [en]
MOSFET, charge-sheet model, retrograde structure, gate
Identifiers
URN: urn:nbn:se:kth:diva-22090ISI: 000179517100028OAI: oai:DiVA.org:kth-22090DiVA: diva2:340788
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Hellberg, Per-Erik

Search in DiVA

By author/editor
Hellberg, Per-ErikZhang, Shi-Li
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Solid-State Electronics

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 91 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf