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Different strain relaxation mechanisms in strained Si/Si1-xGex/Si heterostructures by high dose B+ and BF2+ doping
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2002 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 198, no 02-jan, 57-63 p.Article in journal (Refereed) Published
Abstract [en]

Strained Si/Si0.8Ge0.2/Si heterostructures are implanted at room temperature with 7.5 keV B+ and 33 keV BF2+ ions to a high dose of 2 x 10(15) ions/cm(2), respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV He-4(+) RBS/ channeling spectrometry. A damage layer on the surface is induced by B+ implantation, but BF2+ ion implantation amorphizes the surface of Si/Si0.8Ge0.2/Si heterostructure. Channeling angular scans along the (110) axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B+ implantated and subsequently annealed sample. However, the strain in the BF2+ implanted/annealed SiGe layer has decreased drastically.

Place, publisher, year, edition, pages
2002. Vol. 198, no 02-jan, 57-63 p.
Keyword [en]
ion channeling, B+ and BF2+ implantation, strain, SiGe/Si heterostructure, heterojunction bipolar-transistors, ion-implantation, layer
URN: urn:nbn:se:kth:diva-22117ISI: 000179775100008OAI: diva2:340815
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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