Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
2002 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 49, 21-30 p.Article in journal (Refereed) Published
Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
Place, publisher, year, edition, pages
2002. Vol. 49, 21-30 p.
Na0.5K0.5NbO3 (NKN) thin film, Au/NKN/Ta2O5/Si, MFIS_diode, ferroelectric non-volatile memory, pulsed-laser deposition, varactor
IdentifiersURN: urn:nbn:se:kth:diva-22120ISI: 000179830800005OAI: oai:DiVA.org:kth-22120DiVA: diva2:340818
QC 201005252010-08-102010-08-10Bibliographically approved