Change search
ReferencesLink to record
Permanent link

Direct link
Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
Show others and affiliations
2002 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 49, 21-30 p.Article in journal (Refereed) Published
Abstract [en]

Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.

Place, publisher, year, edition, pages
2002. Vol. 49, 21-30 p.
Keyword [en]
Na0.5K0.5NbO3 (NKN) thin film, Au/NKN/Ta2O5/Si, MFIS_diode, ferroelectric non-volatile memory, pulsed-laser deposition, varactor
URN: urn:nbn:se:kth:diva-22120ISI: 000179830800005OAI: diva2:340818
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Grishin, Alexander M.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Integrated Ferroelectrics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 28 hits
ReferencesLink to record
Permanent link

Direct link