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Material defects in 4H-silicon carbide diodes
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 1, 611-618 p.Article in journal (Refereed) Published
Abstract [en]

Crystallographic defects revealed by synchrotron white beam x-ray topography, electron beam induced current, optical microscopy, and electroluminescence are correlated with the electrical characteristics of medium-voltage epitaxial 4H-silicon carbide diodes. Diodes that include macroscopic crystallographic defects show a significantly reduced reverse breakdown voltage with typical microplasma current fluctuations under reverse bias. Microplasma current paths are revealed by increased electroluminescence both under forward and reverse bias of the diodes and coincide with the locations of screw dislocations in the epitaxial layers of the diodes. The role of crystallographic imperfections on the formation of stacking faults responsible for the degradation of bipolar silicon carbide components is discussed.

Place, publisher, year, edition, pages
2003. Vol. 93, no 1, 611-618 p.
Keyword [en]
assisted reverse breakdown, p(+)n junction diodes, silicon-carbide, bulk
Identifiers
URN: urn:nbn:se:kth:diva-22137DOI: 10.1063/1.1525065ISI: 000180002500094OAI: oai:DiVA.org:kth-22137DiVA: diva2:340835
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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