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Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
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2002 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 49, no 6, 2844-2851 p.Article in journal (Refereed) Published
Abstract [en]

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Place, publisher, year, edition, pages
2002. Vol. 49, no 6, 2844-2851 p.
Keyword [en]
carrier dynamics, compound semiconductors, displacement damage, photoluminescence, Stranski-Krastanow quantum dots, enhanced radiation hardness, light-emitting-diodes, deep levels, gaas, damage, lasers, transformation, dependence, wells, degradation
URN: urn:nbn:se:kth:diva-22141ISI: 000180056800036OAI: diva2:340839
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Marcinkevicius, Saulius
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