Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
Show others and affiliations
2002 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 49, no 6, 2844-2851 p.Article in journal (Refereed) Published
Abstract [en]

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Place, publisher, year, edition, pages
2002. Vol. 49, no 6, 2844-2851 p.
Keyword [en]
carrier dynamics, compound semiconductors, displacement damage, photoluminescence, Stranski-Krastanow quantum dots, enhanced radiation hardness, light-emitting-diodes, deep levels, gaas, damage, lasers, transformation, dependence, wells, degradation
Identifiers
URN: urn:nbn:se:kth:diva-22141ISI: 000180056800036OAI: oai:DiVA.org:kth-22141DiVA: diva2:340839
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Marcinkevicius, Saulius

Search in DiVA

By author/editor
Marcinkevicius, Saulius
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
IEEE Transactions on Nuclear Science

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 37 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf