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Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 248, 431-436 p.Article in journal (Refereed) Published
Abstract [en]

GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature. DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWS.

Place, publisher, year, edition, pages
2003. Vol. 248, 431-436 p.
Keyword [en]
atomic force rnicroscopy, photoluminescence, surface structure, MOVPE, III-V semiconductors, photoluminescence, temperature
Identifiers
URN: urn:nbn:se:kth:diva-22183ISI: 000180446900079OAI: oai:DiVA.org:kth-22183DiVA: diva2:340881
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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