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Solubility limits of dopants in 4H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
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2003 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 203, 427-432 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 degreesC for 45 min to 64 h. Secondary ion mass spectrometry has been employed to obtain depth distributions as well as lateral distributions (ion imaging) for boron and aluminium. Transmission electron microscopy has been used to study the crystallinity and determine phase composition. Solubility limits of similar to 1 x 10(20) Al/cm(3) (1700 degreesC) and < 1 x 10(20) B/cm(3) (1900 degreesC) have been deduced.

Place, publisher, year, edition, pages
2003. Vol. 203, 427-432 p.
Keyword [en]
SIMS, TEM, SiC, solubility limit, precipitates, phase-equilibria, silicon-carbide
URN: urn:nbn:se:kth:diva-22194ISI: 000180527300096OAI: diva2:340892
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnarsson, Margareta K.
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