Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
Show others and affiliations
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 4, 1954-1960 p.Article in journal (Refereed) Published
Abstract [en]

The effects of implantation temperature and ion flux on damage accumulation on both the Si and C sublattices in 4H-SiC have been investigated under 1.1-MeV Al-2(2+) irradiation at temperatures from 150 to 450 K. The rate of damage accumulation decreases dramatically, and the damage profile sharpens due to significant dynamic recovery at temperatures close to the critical temperature for amorphization. At 450 K, the relative disorder and the density of planar defects increase rapidly with the increasing ion flux, exhibiting saturation at high ion fluxes. Planar defects are generated through the agglomeration of excess Si and C interstitials during irradiation and post-irradiation annealing at 450 K. A volume expansion of similar to8% is estimated for the peak damage region.

Place, publisher, year, edition, pages
2003. Vol. 93, no 4, 1954-1960 p.
Keyword [en]
irradiation-induced amorphization, silicon-carbide, diodes, breakdown, evolution, ceramics, alpha
Identifiers
URN: urn:nbn:se:kth:diva-22218DOI: 10.1063/1.1537451ISI: 000180702400017OAI: oai:DiVA.org:kth-22218DiVA: diva2:340916
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Hallén, Anders.

Search in DiVA

By author/editor
Hallén, Anders.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 18 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf