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Doping-induced bandgap narrowing in Si rich n- and p-type Si1-xGex
KTH, Superseded Departments, Materials Science and Engineering.ORCID iD: 0000-0002-9050-5445
KTH, Superseded Departments, Materials Science and Engineering.
2003 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 15, no 3, 489-502 p.Article in journal (Refereed) Published
Abstract [en]

The shifts of the fundamental and optical bandgap energies as functions of dopant concentration in heavily n-type and p-type doped Si1-xGex (x less than or equal to 0.3) have been investigated theoretically. The band structure of the intrinsic crystal was described by the k . p-perturbation method, where the Kohn-Luttinger parameters were determined from a first-principles and full-potential band-structure calculation. The doping-induced effects on the bandgap were thereafter calculated using a zero-temperature Green function formalism within the random phase approximation and with a local field correction of Hubbard. We found only small effects on the bandgap energies due to variation of composition x. The calculated bandgap narrowing of Si and of Si0.82Ge0.18 were found to be in good agreement with photoluminescence measurements.

Place, publisher, year, edition, pages
2003. Vol. 15, no 3, 489-502 p.
Keyword [en]
heavily doped silicon, bicmos technology, electron-gas, semiconductors, ge, photoluminescence, layers, alloys, energy, shifts
URN: urn:nbn:se:kth:diva-22266ISI: 000181100900017OAI: diva2:340964
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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