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Schottky-barrier behavior of metals on n- and p-type 6H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 7Article in journal (Refereed) Published
Abstract [en]

The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n- and p-type Si-terminated 6H-SiC has been measured in the temperature range 150-500 K. It is found that the barrier height to n-type 6H-SiC does not exhibit a temperature dependence, while for p-type 6H-SiC the change in the barrier height with temperature follows very closely the change in the indirect energy gap in 6H-SiC. These results are inconsistent with models of Schottky-barrier formation based on the concept of a charge neutrality level. Furthermore, the present results cannot be reconciled with a defect pinning mechanism, contrary to the conclusions of earlier studies on III-V compound semiconductors. We suggest that chemical bonding at the metal-semiconductor interface plays an important role in determining the Schottky-barrier height.

Place, publisher, year, edition, pages
2003. Vol. 67, no 7
Keyword [en]
gap states, electronic-structure, conduction-band, chemical trends, dangling bonds, interface, defects, contacts, silicon, dependence
Identifiers
URN: urn:nbn:se:kth:diva-22311DOI: 10.1103/PhysRevB.67.075312ISI: 000181501200045OAI: oai:DiVA.org:kth-22311DiVA: diva2:341009
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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