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Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications
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2003 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 150, no 4, G253-G257 p.Article in journal (Refereed) Published
Abstract [en]

The selective growth of Si-buffer/Si1-xGex/Si-cap structures (0.14 < x < 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B- or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistances, e.g., 195 and 260 Omega/square for 420 Angstrom thick, B-doped Si0.81Ge0.19 and P-doped Si0.71Ge0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.

Place, publisher, year, edition, pages
2003. Vol. 150, no 4, G253-G257 p.
Keyword [en]
si, heterostructures, mobility, growth
Identifiers
URN: urn:nbn:se:kth:diva-22316DOI: 10.1149/1.1556599ISI: 000181515100060OAI: oai:DiVA.org:kth-22316DiVA: diva2:341014
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Radamson, Henry H.
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Microelectronics and Information Technology, IMIT
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