Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
2003 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, no 4, 639-644 p.Article in journal (Refereed) Published
Silicon carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of 450 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 degreesC, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. The device was also tested in a switched setup, showing fast turn on and turn off at 1 MHz and 300 V supply voltage. Device simulations have been used to analyze the measured data. The thermal conductivity is fitted against the self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Place, publisher, year, edition, pages
2003. Vol. 47, no 4, 639-644 p.
bipolar transistor, thermal conductivity, breakdown voltage, junction transistors, silicon-carbide, devices
IdentifiersURN: urn:nbn:se:kth:diva-22322ISI: 000181539300007OAI: oai:DiVA.org:kth-22322DiVA: diva2:341020
QC 201005252010-08-102010-08-10Bibliographically approved