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Optical properties of SiGe alloys
KTH, Superseded Departments, Materials Science and Engineering.
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 7, 3832-3836 p.Article in journal (Refereed) Published
Abstract [en]

The optical properties of Si1-xGex have been investigated theoretically using a full-potential linear muffin-tin-orbital method. We present the density-of-states as well as the real and imaginary parts of the dielectric function. The calculated dielectric function was found to be in good agreement with the spectroscopic ellipsometry measurements by J. Bahng , J. Phys.: Condens. Matter 13, 777 (2001), and we obtained a static dielectric constant of epsilon(0)=12.19+2.45x in the Si rich regime (xless than or equal to0.5).

Place, publisher, year, edition, pages
2003. Vol. 93, no 7, 3832-3836 p.
Keyword [en]
bicmos technology, enhancement-mode, brillouin-zone, special points, silicon, band, transistors, systems
URN: urn:nbn:se:kth:diva-22350DOI: 10.1063/1.1555702ISI: 000181729600016OAI: diva2:341048
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Ahuja, RajeevPersson, ClasJohansson, Börje
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