Phosphorus and boron diffusion in silicon under equilibrium conditions
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 14, 2254-2256 p.Article in journal (Refereed) Published
The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 degreesC) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74+/-0.07 eV and a pre-exponential factor of (8+/-5)x10(-4) cm(2)/s. In the temperature range of 810 to 1050 degreesC, boron was found to diffuse with an activation energy of 3.12+/-0.04 eV and a pre-exponential factor of 0.06+/-0.02 cm(2)/s. These results differ from those of many previous studies, but this deviation may to a large extent be attributed to slow transients before equilibrium concentrations of point defects are established at temperatures below similar to1000 degreesC. Despite a similar diffusion mechanism mediated by Si self-interstitials, P exhibits a lower activation energy than B because of stronger bonding to the Si self-interstitial.
Place, publisher, year, edition, pages
2003. Vol. 82, no 14, 2254-2256 p.
IdentifiersURN: urn:nbn:se:kth:diva-22386DOI: 10.1063/1.1566464ISI: 000182018800020OAI: oai:DiVA.org:kth-22386DiVA: diva2:341084
QC 201005252010-08-102010-08-10Bibliographically approved