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Phosphorus and boron diffusion in silicon under equilibrium conditions
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 14, 2254-2256 p.Article in journal (Refereed) Published
Abstract [en]

The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 degreesC) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74+/-0.07 eV and a pre-exponential factor of (8+/-5)x10(-4) cm(2)/s. In the temperature range of 810 to 1050 degreesC, boron was found to diffuse with an activation energy of 3.12+/-0.04 eV and a pre-exponential factor of 0.06+/-0.02 cm(2)/s. These results differ from those of many previous studies, but this deviation may to a large extent be attributed to slow transients before equilibrium concentrations of point defects are established at temperatures below similar to1000 degreesC. Despite a similar diffusion mechanism mediated by Si self-interstitials, P exhibits a lower activation energy than B because of stronger bonding to the Si self-interstitial.

Place, publisher, year, edition, pages
2003. Vol. 82, no 14, 2254-2256 p.
Keyword [en]
point-defects, surface
URN: urn:nbn:se:kth:diva-22386DOI: 10.1063/1.1566464ISI: 000182018800020OAI: diva2:341084
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Radamson, Henry H.
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