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Enhanced phase stability and morphological stability of Ni(Si,Ge) on strained Si0.8Ge0.2
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 429, no 02-jan, 216-219 p.Article in journal (Refereed) Published
Abstract [en]

NiSi0.8Ge0.2 film formed on a strained Si0.8Ge0.2 layer epitaxially grown on a Si(100) substrate wafer is morphologically stable up to 750 degreesC. The NiSi0.8Ge0.2 film is found to be strongly oriented along its <010> direction. This remarkable stability is thus possibly caused by the tendency of an epitaxial alignment between the NiSi0.8Ge0.2 film and the Si0.8Ge0.2 layer. The presence of Ge in NiSi forming the ternary solution NiSi0.8Ge0.2 hinders the formation of NiSi2 even at 850 degreesC.

Place, publisher, year, edition, pages
2003. Vol. 429, no 02-jan, 216-219 p.
Keyword [en]
nickel, silicides, silicon-germanium, epitaxy, thin-films, si1-xgex, nisi
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-22472DOI: 10.1016/S0040-6090(03)00062-2ISI: 000182647900031OAI: oai:DiVA.org:kth-22472DiVA: diva2:341170
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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