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MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-9040-4740
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2003 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 8, 662-664 p.Article in journal (Refereed) Published
Abstract [en]

1.3 mum oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (I I mum oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce I mW of output power at 20degreesC. The maximum operating temperature is 95degreesC. Emission at 1303 nm with I mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.

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2003. Vol. 39, no 8, 662-664 p.
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URN: urn:nbn:se:kth:diva-22476DOI: 10.1049/el:20030450ISI: 000182656400018OAI: oai:DiVA.org:kth-22476DiVA: diva2:341174
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hammar, Mattias

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