Change search
ReferencesLink to record
Permanent link

Direct link
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Show others and affiliations
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 22, 3913-3915 p.Article in journal (Refereed) Published
Abstract [en]

Undoped In0.53Ga0.47As epilayers were implanted with 2- MeV Fe+ ions at doses of 1x10(15) and 1x10(16) cm(-2) at room temperature and annealed at temperatures between 500 and 800 degreesC. Hall-effect measurements show that after annealing, layers with resistivities on the order of 10(5) Omega/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 degreesC. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.

Place, publisher, year, edition, pages
2003. Vol. 82, no 22, 3913-3915 p.
Keyword [en]
molecular-beam epitaxy, temperature-grown gaas, carrier lifetime, semiconductors, dynamics, ingaas, inp
URN: urn:nbn:se:kth:diva-22528DOI: 10.1063/1.1579565ISI: 000183124200035OAI: diva2:341226
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Marcinkevicius, Saulius
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Applied Physics Letters

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 24 hits
ReferencesLink to record
Permanent link

Direct link