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Ion implantation range distributions in silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 11, 8903-8909 p.Article in journal (Refereed) Published
Abstract [en]

The first to fourth order distribution moments, R-p, DeltaR(p), gamma, and beta, of 152 single energy H-1, H-2, Li-7, B-11, N-14, O-16, Al-27, P-31, Ga-69, and As-75 implantations into silicon carbide (SiC) have been assembled. Fifty of these implantations have been performed and analyzed in the present study while the remaining mplantation data was compiled from the literature. For ions with a limited amount of experimental data, additional implantations were simulated using a recently developed binary collision approximation code for crystalline materials. Least squares fits of analytical functions to the distribution moments versus implantation energy provide the base for an empirical ion implantation simulator using Pearson frequency functions.

Place, publisher, year, edition, pages
2003. Vol. 93, no 11, 8903-8909 p.
Identifiers
URN: urn:nbn:se:kth:diva-22530DOI: 10.1063/1.1569666ISI: 000183144300011OAI: oai:DiVA.org:kth-22530DiVA: diva2:341228
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnarsson, Margareta K.

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