Dislocation loop evolution in ion implanted 4H-SiC
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 11, 9395-9397 p.Article in journal (Refereed) Published
4H-SiC epilayers, were implanted with Al-27 in doses from 1.3 X 10(14) cm(-2) to 7.8 X 10(14) cm(-2). Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy And high-resolution cross-sectional transmission electron microscopy. The total dislocation loop area was found to vary linearly with the implanted dose. For each dose, the total dislocation loop area, reflecting the amount of interstitial bound to loops, stays constant both with prolonged annealing and increasing temperature. Simultaneously, the average radius of the dislocation loops increases, indicating a process similar to Ostwald ripening.
Place, publisher, year, edition, pages
2003. Vol. 93, no 11, 9395-9397 p.
IdentifiersURN: urn:nbn:se:kth:diva-22531DOI: 10.1063/1.1569027ISI: 000183144300088OAI: oai:DiVA.org:kth-22531DiVA: diva2:341229
QC 201005252010-08-102010-08-10Bibliographically approved