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Aluminum doping of epitaxial silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
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2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 253, no 04-jan, 340-350 p.Article in journal (Refereed) Published
Abstract [en]

Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50degreesC. The highest atomic concentration of aluminum observed in this study was 3 x 10(17) and 8 x 10(18) cm(-3) in Si and C-face, respectively.

Place, publisher, year, edition, pages
2003. Vol. 253, no 04-jan, 340-350 p.
Keyword [en]
doping, growth models, chemical vapor deposition processes, hot wall epitaxy, semiconducting silicon carbide, chemical-vapor-deposition, al
URN: urn:nbn:se:kth:diva-22535DOI: 10.1016/s0022-0248(03)01045-5ISI: 000183223100050OAI: diva2:341233
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnarsson, Margareta K.
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