A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
2003 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 24, no 3, 171-173 p.Article in journal (Refereed) Published
Proof-of-concept pMOSFETs with a strained-Si0.7Ge0.3 surface-channel deposited by selective epitaxy and a TiN/Al2O3/HfAIO(x)/Al2O3 gate stack grown by atomic layer chemical vapor deposition (ALD) techniques were fabricated. The Si0.7Ge0.3 pMOSFETs exhibited more than 30% higher current drive and peak transconductance than reference Si pMOSFETs with the same gate stack. The effective mobility for the Si reference coincided with the universal hole mobility curve for Si. The presence of a relatively low density of interface states, determined as 3.3x10(11) cm(-2) eV(-1), yielded a subthreshold slope of 75 mV/dec. for the Si reference. For the Si0.7Ge0.3 pMOSFETs, these values were 1.6x10(12) cm(-2) eV(-1) and 110 mV/dec., respectively.
Place, publisher, year, edition, pages
2003. Vol. 24, no 3, 171-173 p.
atomic layer chemical vapor deposition (ALD), high-kappa, metal gate, MOSFET, SiGe, surface-channel, sige
IdentifiersURN: urn:nbn:se:kth:diva-22542DOI: 10.1109/led.2003.809524ISI: 000183268000016OAI: oai:DiVA.org:kth-22542DiVA: diva2:341240
QC 201005252010-08-102010-08-10Bibliographically approved