Epitaxial colossal magnetoresistive La-0.67(Sr,Ca)(0.33)MnO3 films on Si.
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 24, 4295-4297 p.Article in journal (Refereed) Published
La-0.67(Sr,Ca)(0.33)MnO3 (LSCMO) films have been grown by a pulsed-laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ) heteroepitaxial layers. X-ray diffraction has revealed cube-on-cube growth of an epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the diagonal-on-side manner on top of the Bi4Ti3O12 (BTO) template. The maximum temperature coefficient of resistivity (TCR)=4.4% K-1 and colossal magnetoresistance (CMR) Deltarho/rhosimilar to2.9% kOe(-1) have been reached at 294 K. This was achieved due to the successive improvement of c-axis orientation of the layers: Full widths at half-maximum 0.65degrees, 0.58degrees, 0.65degrees, 1.13degrees, and 0.18degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. As a prototype of an uncooled bolometer, heteroepitaxial CMR structure on Si demonstrates, at 294 K, the noise equivalent temperature difference of 1.2 muK/rootHz@30 Hz.
Place, publisher, year, edition, pages
2003. Vol. 82, no 24, 4295-4297 p.
pulsed-laser deposition, thin-films, uncooled bolometer, growth
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-22577DOI: 10.1063/1.1583133ISI: 000183467500028OAI: oai:DiVA.org:kth-22577DiVA: diva2:341275
QC 201005252010-08-102010-08-102010-11-01Bibliographically approved