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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 2, 1074-1078 p.Article in journal (Refereed) Published
Abstract [en]

MeV P+ implanted and annealed p-InP, and Fe+ implanted and annealed semi-insulating InP have both been shown to produce the high resistivity, good mobility, and ultrafast optical response desired for ultrafast photodetectors. Hall effect measurements and time resolved photoluminescence were used to analyze the electrical and optical features of such implanted materials. Low temperature annealing was found to yield the fastest response times-130 fs for Fe+ implanted and 400 fs for P+ implanted InP, as well as resistivities of the order similar to10(6) Omega/square. It was found that the electrical activation of Fe-related centers, useful for achieving high resistivities in Fe+ implanted semi-insulating InP, was not fully realized at the annealing temperatures chosen to produce the fastest optical response. Implanting p-InP in the dose regime where type conversion occurs, and subsequent annealing at 500degreesC, produces high resistivities and ultrafast carrier trapping times that are only marginally dose dependent.

Place, publisher, year, edition, pages
2003. Vol. 94, no 2, 1074-1078 p.
Keyword [en]
doped semiinsulating inp, molecular-beam epitaxy, low-temperature, optoelectronic applications, gaas, defects, fe, semiconductors, dynamics, vacancy
URN: urn:nbn:se:kth:diva-22627DOI: 10.1063/1.1576516ISI: 000183842200038OAI: diva2:341325
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Marcinkevicius, Saulius
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Microelectronics and Information Technology, IMIT
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