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Origin of temperature dependence in tunneling magnetoresistance
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2003 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 63, no 1, 104-110 p.Article in journal (Refereed) Published
Abstract [en]

We present detailed measurements of the differential resistance (dV/dI) of state-of-the-art FM/AlOx/FM magnetic tunnel junctions (MTJ) as a function of applied bias and temperature. Temperature effects are particularly significant in physical quantities involving narrow features such as those at low-voltage bias. We show that the temperature evolution of the tunneling characteristics and, in particular, the pronounced rounding of the dV/dI curves with increasing temperature can be well explained by thermal smearing of the tunneling electron energy distribution.

Place, publisher, year, edition, pages
2003. Vol. 63, no 1, 104-110 p.
Keyword [en]
junctions, mram
Identifiers
URN: urn:nbn:se:kth:diva-22633ISI: 000183880700016OAI: oai:DiVA.org:kth-22633DiVA: diva2:341331
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Åkerman, Johan
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