Change search
ReferencesLink to record
Permanent link

Direct link
Origin of temperature dependence in tunneling magnetoresistance
Show others and affiliations
2003 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 63, no 1, 104-110 p.Article in journal (Refereed) Published
Abstract [en]

We present detailed measurements of the differential resistance (dV/dI) of state-of-the-art FM/AlOx/FM magnetic tunnel junctions (MTJ) as a function of applied bias and temperature. Temperature effects are particularly significant in physical quantities involving narrow features such as those at low-voltage bias. We show that the temperature evolution of the tunneling characteristics and, in particular, the pronounced rounding of the dV/dI curves with increasing temperature can be well explained by thermal smearing of the tunneling electron energy distribution.

Place, publisher, year, edition, pages
2003. Vol. 63, no 1, 104-110 p.
Keyword [en]
junctions, mram
URN: urn:nbn:se:kth:diva-22633ISI: 000183880700016OAI: diva2:341331
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Åkerman, Johan
In the same journal
Europhysics letters

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 11 hits
ReferencesLink to record
Permanent link

Direct link