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Identification of hydrogen related defects in proton implanted float-zone silicon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2003 (English)In: European Physical Journal: Applied physics, ISSN 1286-0042, E-ISSN 1286-0050, Vol. 23, no 1, 5-9 p.Article in journal (Refereed) Published
Abstract [en]

Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (V-2) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (E-c). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of V-2, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The E-c-0.32 eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the E-c-0.45 eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom ( a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy ( a V2H complex).

Place, publisher, year, edition, pages
2003. Vol. 23, no 1, 5-9 p.
Keyword [en]
level transient spectroscopy, si-a center, irradiated silicon, electron traps, divacancy
URN: urn:nbn:se:kth:diva-22635ISI: 000183880900002OAI: diva2:341333
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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