Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
2003 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 12, 933-935 p.Article in journal (Refereed) Published
A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300degreesC. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.
Place, publisher, year, edition, pages
2003. Vol. 39, no 12, 933-935 p.
IdentifiersURN: urn:nbn:se:kth:diva-22636DOI: 10.1049/el:20030606ISI: 000183896000033OAI: oai:DiVA.org:kth-22636DiVA: diva2:341334
QC 201005252010-08-102010-08-10Bibliographically approved