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Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2003 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 12, 933-935 p.Article in journal (Refereed) Published
Abstract [en]

A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300degreesC. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.

Place, publisher, year, edition, pages
2003. Vol. 39, no 12, 933-935 p.
Keyword [en]
field-effect transistors
Identifiers
URN: urn:nbn:se:kth:diva-22636DOI: 10.1049/el:20030606ISI: 000183896000033OAI: oai:DiVA.org:kth-22636DiVA: diva2:341334
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-Mikael

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