Interaction between oxygen and InAs(111) surfaces, influence of the electron accumulation layer
2003 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 212, 589-594 p.Article in journal (Refereed) Published
The oxidation of InAs(1 1 1) surfaces has been studied by photoelectron spectroscopy. Both the InAs(1 1 1)A and the InAs(1 1 1)B surfaces are studied and it. is found that the initial oxidation follows different paths for the two surfaces. At low oxygen exposures of the A face the Fermi level structure, which is due to the electron accumulation layer, increases in intensity. On the B-side the intensity of the lone pair surface state decreases with increasing oxygen exposure. For larger exposures significant changes can be observed in the line shape of the In 4d and the As 3d core levels.
Place, publisher, year, edition, pages
2003. Vol. 212, 589-594 p.
photoelectron spectroscopy, indium arsenide, oxidation, accumulation layer, inas surfaces, core-level, gaas(110), state, band
IdentifiersURN: urn:nbn:se:kth:diva-22647DOI: 10.1016/S0169-4332(03)00132-6ISI: 000183967200107OAI: oai:DiVA.org:kth-22647DiVA: diva2:341345
QC 201005252010-08-102010-08-102016-06-01Bibliographically approved