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Velocity modulation in III/V-HBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 50, no 5, 1205-1213 p.Article in journal (Refereed) Published
Abstract [en]

Velocity modulation is shown to have a strong impact on the base/collector capacitance and the collector transit-time delay which dominate the high-speed performance of state-of-the-art HBTs. The authors present a theoretical analysis of the velocity modulation effects, which is the base of a method to assess their strength from measured S-parameters. Monte Carlo simulations are in good agreement with the measurements, providing strong support for the theory. As a consequence, the authors find that the carrier velocity is much lower than estimated from transit-time measurements when neglecting velocity modulation and that base-pushout occurs at much lower current levels than commonly expected.

Place, publisher, year, edition, pages
2003. Vol. 50, no 5, 1205-1213 p.
Keyword [en]
base-pushout, InP-HBT, velocity modulation, bipolar-transistors, time
Identifiers
URN: urn:nbn:se:kth:diva-22662DOI: 10.1109/ted.2003.813466ISI: 000184064400007OAI: oai:DiVA.org:kth-22662DiVA: diva2:341360
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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