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Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 4, 2746-2748 p.Article in journal (Refereed) Published
Abstract [en]

High-resolution x-ray diffraction reciprocal lattice mapping and low-temperature photoluminescence (PL) were used to study the thermal strain in InP layers grown on Si (001) substrate by hydride vapor-phase epitaxial lateral overgrowth (ELO) technique. Good agreement is found between the PL and x-ray measurements. We show that strain in the grown ELO InP/Si layers is affected by the aspect ratio (width to height ratio) of the ELO InP layer. Almost strain-free InP layer with high crystallographic quality is obtained on Si substrate, which is similar to that of a homoepitaxial InP layer.

Place, publisher, year, edition, pages
2003. Vol. 94, no 4, 2746-2748 p.
Keyword [en]
inp, semiconductors, si
URN: urn:nbn:se:kth:diva-22707DOI: 10.1063/1.1593213ISI: 000184469800095OAI: diva2:341405
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Lourdudoss, Sebastian
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