Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 4, 2746-2748 p.Article in journal (Refereed) Published
High-resolution x-ray diffraction reciprocal lattice mapping and low-temperature photoluminescence (PL) were used to study the thermal strain in InP layers grown on Si (001) substrate by hydride vapor-phase epitaxial lateral overgrowth (ELO) technique. Good agreement is found between the PL and x-ray measurements. We show that strain in the grown ELO InP/Si layers is affected by the aspect ratio (width to height ratio) of the ELO InP layer. Almost strain-free InP layer with high crystallographic quality is obtained on Si substrate, which is similar to that of a homoepitaxial InP layer.
Place, publisher, year, edition, pages
2003. Vol. 94, no 4, 2746-2748 p.
inp, semiconductors, si
IdentifiersURN: urn:nbn:se:kth:diva-22707DOI: 10.1063/1.1593213ISI: 000184469800095OAI: oai:DiVA.org:kth-22707DiVA: diva2:341405
QC 201005252010-08-102010-08-10Bibliographically approved