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Scanning spreading resistance microscopy of aluminum implanted 4H-SiC
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2003 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 102, no 03-jan, 128-131 p.Article in journal (Refereed) Published
Abstract [en]

Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 degreesC. Finally, an apparent activation energy for the process of 3 eV is estimated.

Place, publisher, year, edition, pages
2003. Vol. 102, no 03-jan, 128-131 p.
Keyword [en]
silicon carbide, SSRM, implantation, activation, 6h-sic epilayers
Identifiers
URN: urn:nbn:se:kth:diva-22790ISI: 000185174800026OAI: oai:DiVA.org:kth-22790DiVA: diva2:341488
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders

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