Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 10, 6533-6540 p.Article in journal (Refereed) Published
Phosphorus diffusion has been studied in relaxed Si1-xGex samples (x=0.11 and 0.19) and strained Si/Si1-xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of -13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1-xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1-xGex. Further, P is found to segregate into Si across Si/Si1-xGex interfaces and the segregation coefficient increases with increasing Ge concentration.
Place, publisher, year, edition, pages
2003. Vol. 94, no 10, 6533-6540 p.
boron-diffusion, epitaxial layers, silicon, segregation, si, sb, mechanisms, defects
IdentifiersURN: urn:nbn:se:kth:diva-22923DOI: 10.1063/1.1622771ISI: 000186276600046OAI: oai:DiVA.org:kth-22923DiVA: diva2:341621
QC 201005252010-08-102010-08-10Bibliographically approved