Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 10, 6533-6540 p.Article in journal (Refereed) Published
Abstract [en]

Phosphorus diffusion has been studied in relaxed Si1-xGex samples (x=0.11 and 0.19) and strained Si/Si1-xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of -13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1-xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1-xGex. Further, P is found to segregate into Si across Si/Si1-xGex interfaces and the segregation coefficient increases with increasing Ge concentration.

Place, publisher, year, edition, pages
2003. Vol. 94, no 10, 6533-6540 p.
Keyword [en]
boron-diffusion, epitaxial layers, silicon, segregation, si, sb, mechanisms, defects
Identifiers
URN: urn:nbn:se:kth:diva-22923DOI: 10.1063/1.1622771ISI: 000186276600046OAI: oai:DiVA.org:kth-22923DiVA: diva2:341621
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Radamson, Henry H.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 29 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf