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Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 10, 6533-6540 p.Article in journal (Refereed) Published
Abstract [en]

Phosphorus diffusion has been studied in relaxed Si1-xGex samples (x=0.11 and 0.19) and strained Si/Si1-xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of -13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1-xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1-xGex. Further, P is found to segregate into Si across Si/Si1-xGex interfaces and the segregation coefficient increases with increasing Ge concentration.

Place, publisher, year, edition, pages
2003. Vol. 94, no 10, 6533-6540 p.
Keyword [en]
boron-diffusion, epitaxial layers, silicon, segregation, si, sb, mechanisms, defects
URN: urn:nbn:se:kth:diva-22923DOI: 10.1063/1.1622771ISI: 000186276600046OAI: diva2:341621
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Radamson, Henry H.
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