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Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2003 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 15, no 39, S2771-S2777 p.Article in journal (Refereed) Published
Abstract [en]

Radiation-induced divacancy-related levels in high-purity oxygen-enriched n-type silicon have been studied with the use of deep level transient spectroscopy (DLTS) and Laplace-DLTS. It has been shown that heat treatment at 250degreesC results in a shift of the divacancy (V-2)-related peaks observed by 'standard' DLTS. Using Laplace-DLTS it is demonstrated that the shift is due to annealing of V-2 and formation of a new acceptor centre. The new centre has presumably two negative charge states: singly and doubly negative. The formation of the new centre holds a close one-to-one correlation with the annealing of V-2, indicating that the new centre is a result of divacancy interaction with an impurity or a defect. The close position of the electronic levels of the new centre to that of V-2 suggests a similar electronic and microscopic structure of the new centre to V-2, and a tentative identification is a divacancy-oxygen centre.

Place, publisher, year, edition, pages
2003. Vol. 15, no 39, S2771-S2777 p.
Keyword [en]
vacancy-oxygen complexes, silicon, defects
URN: urn:nbn:se:kth:diva-22925ISI: 000186283200002OAI: diva2:341623
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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