Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 19, 3975-3977 p.Article in journal (Refereed) Published
Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O-3/Al2O3 gate stack on n-type epitaxial channel layer and p-type substrate of 4H-SiC. A memory window, as wide as 5 V, has been observed in the drain current and the ferroelectric gate voltage transfer characteristics. The transistor showed memory effect from room temperature up to 200 degreesC, whereas stable transistor operation was observed up to 300 degreesC. The retention of remnant polarization was preserved after 2x10(4) s at 150 degreesC with no bias on the gate.
Place, publisher, year, edition, pages
2003. Vol. 83, no 19, 3975-3977 p.
semiconductors, frequency, retention, memories, figure, merit
IdentifiersURN: urn:nbn:se:kth:diva-22932DOI: 10.1063/1.1625425ISI: 000186360500041OAI: oai:DiVA.org:kth-22932DiVA: diva2:341630
QC 201005252010-08-102010-08-10Bibliographically approved