Nickel-based contact metallization for SiGe MOSFETs: progress and challenges
2003 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 70, no 04-feb, 174-185 p.Article in journal (Refereed) Published
The Ni-based self-aligned silicide process has attracted a rapidly growing interest for contact metallization in Si technology, as the device dimensions are scaled down into the sub-100 nm regime. Incorporation of Ge in the electrodes of a MOSFET, i.e. gate and source/drain, in order to further enhance device performance, has made the study of Ni-Si1-xGex interactions a scientifically and technologically important issue. Among the different germanosilicides of Ni, NiSi1-uGeu (i.e. mono-germanosilicide, with u possibly different from x in the Si1 -xGex) is the most desirable phase due to its low specific resistivity of 12-25 muOmegacm. The focus of the present work is placed on issues concerning the phase and morphology stability of NiSi1-uGeu on single-crystal and polycrystalline Si1-xGex substrates. The related experimental data from our recent work are analysed with reference to two classics on the formation of silicides by d'Heurle [J. Mater. Res. 3 (1988) 167] and by d'Heurle and Gas [J. Mater. Res. 1 (1986) 205]. Influences of C and Pt on the stability of NiSi1-uGeu are also covered. The electrical properties of the NiSi1-uGeu-Si1-xGex contact are discussed referring to our latest experimental results.
Place, publisher, year, edition, pages
2003. Vol. 70, no 04-feb, 174-185 p.
nickel, silicon-germanium, silicide, contact, interface, surface morphology, resistivity, polycrystalline sixge1-x films, thermal-stability, thin-films, nisi films, intermetallic compounds, silicide formation, phase-stability, si1-xgex, nucleation, substrate
IdentifiersURN: urn:nbn:se:kth:diva-22939ISI: 000186423900008OAI: oai:DiVA.org:kth-22939DiVA: diva2:341637
QC 201005252010-08-102010-08-10Bibliographically approved