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Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 11, 7112-7115 p.Article in journal (Refereed) Published
Abstract [en]

A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9x10(10)-4.9x10(13) ions/cm(2) s) and keeping the implantation dose constant at 5x10(14) Si+/cm(2). The implants were performed both at room and elevated temperatures, up to 220 degreesC. Rutherford backscattering spectrometry in the channelling mode using 2 MeV He+ ions was employed to measure ion implantation damage profiles in the samples. For the flux interval used the most, pronounced dynamic annealing effect was detected at 80-160degreesC, having an activation energy of 1.3 eV. For example, at 100degreesC the amount of disordered Si atoms at the projected ion range is reduced by a factor of 4 by decreasing the ion flux from 4.9x10(13) to 1.9x10(10) ions/cm(2) s. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices. In addition, two regions for the damage accumulation - at the surface and at the damage peak for 100 keV Si+ ions - are observed.

Place, publisher, year, edition, pages
2003. Vol. 94, no 11, 7112-7115 p.
Keyword [en]
damage accumulation, point-defects, dose-rate, gaas
URN: urn:nbn:se:kth:diva-22951DOI: 10.1063/1.1622797ISI: 000186492600015OAI: diva2:341649
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.
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