Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 11, 7112-7115 p.Article in journal (Refereed) Published
A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9x10(10)-4.9x10(13) ions/cm(2) s) and keeping the implantation dose constant at 5x10(14) Si+/cm(2). The implants were performed both at room and elevated temperatures, up to 220 degreesC. Rutherford backscattering spectrometry in the channelling mode using 2 MeV He+ ions was employed to measure ion implantation damage profiles in the samples. For the flux interval used the most, pronounced dynamic annealing effect was detected at 80-160degreesC, having an activation energy of 1.3 eV. For example, at 100degreesC the amount of disordered Si atoms at the projected ion range is reduced by a factor of 4 by decreasing the ion flux from 4.9x10(13) to 1.9x10(10) ions/cm(2) s. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices. In addition, two regions for the damage accumulation - at the surface and at the damage peak for 100 keV Si+ ions - are observed.
Place, publisher, year, edition, pages
2003. Vol. 94, no 11, 7112-7115 p.
damage accumulation, point-defects, dose-rate, gaas
IdentifiersURN: urn:nbn:se:kth:diva-22951DOI: 10.1063/1.1622797ISI: 000186492600015OAI: oai:DiVA.org:kth-22951DiVA: diva2:341649
QC 201005252010-08-102010-08-10Bibliographically approved