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Excitonic absorption above the Mott transition in Si
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2003 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 91, no 24Article in journal (Refereed) Published
Abstract [en]

We present experimental evidence for the existence of excitonic states above the excitonic Mott transition in both highly doped and highly excited silicon. Previous limitations to resolve the fundamental absorption edge of Si at dense carrier plasmas are overcome employing a novel spatially and time-resolved spectroscopy. We show that the obtained density dependent excess absorption at 75 K represents an excitonic enhancement effect, which is attributed to persisting many-body interactions.

Place, publisher, year, edition, pages
2003. Vol. 91, no 24
Keyword [en]
fermi-edge singularity, optical-absorption, doped silicon, semiconductors, plasma, gas
Identifiers
URN: urn:nbn:se:kth:diva-23019DOI: 10.1103/PhysRevLett.91.246401ISI: 000187202000044OAI: oai:DiVA.org:kth-23019DiVA: diva2:341717
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnros, Jan

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