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Vacancy-related defect distributions in B-11-, N-14-, and Al-27-implanted 4H-SiC: Role of channeling
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 1, 57-63 p.Article in journal (Refereed) Published
Abstract [en]

The defect distributions in B-11-, N-14-, and Al-27-implanted epitaxial 4H-SiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are tentatively identified as V-Si, and VSiVC. By comparing the defect profiles extracted from the annihilation spectra to the chemical profiles determined by secondary ion mass spectrometry, and to the primary defect profiles obtained from binary collision approximation simulations, it is concluded that the defects found at depths considerably deeper than the projected range of the implanted ions mainly originate from deeply channeled ions.

Place, publisher, year, edition, pages
2004. Vol. 95, no 1, 57-63 p.
Keyword [en]
monoenergetic positron beams, annihilation, silicon, spectroscopy, transport, damage, ions
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23028DOI: 10.1063/1.1630359ISI: 000187341900010Scopus ID: 2-s2.0-0942300870OAI: oai:DiVA.org:kth-23028DiVA: diva2:341726
Note
QC 20100525 QC 20111031Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-31Bibliographically approved

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Hallén, Anders.

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