Electro-optic properties of heteroepitaxial Pb(Zr,Ti)O-3/La0.5Sr0.5CoO3 film structures
2003 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 54, 607-618 p.Article in journal (Refereed) Published
Vertical ferroelectric Pb(Zr,Ti)O-3 (PZT) 1 mum thick film capacitor was fabricated by pulsed laser deposition technique (PLD) onto conducting La-0.5 Sr-0.5 CoO3 (LSCO) 100 nm thick bottom electrode on both side polished YAlO 3 + 1% Nd2O3 (Nd:YAlO3) single crystal substrate to operate as a Pockels cell optical modulator. On top of the PZT film, semitransparent 30 nm thick Au electrode was deposited by thermal evaporation. Intensity of the chopped 670 nm polarized laser radiation transmitted through the Au/PZT/LSCO/Nd:YAlO3 cell was measured at various temperatures and bias voltage applied. Applying 20 V (200 kV/cm) across the capacitive cell, modulation of the transmitted light as high as 3% was achieved while the voltage tunability measured at 1 kHz from C - V characteristics was about 70%. Thermo-optical measurements performed for PZT/Nd:YAlO3 sample in the range up to 400degreesC showed the phenomenon of critical opalescence in the vicinity of Curie temperature at 208degreesC. Optical transmission through the PZT film biased with electric field was studied in the range 400 to 1000 nm. Film thickness, refraction index and absorption coefficient have been determined from the interference pattern observed in the PZT transmission spectrum. A simple model yields the dispersion relation for the electro-optic coefficient.
Place, publisher, year, edition, pages
2003. Vol. 54, 607-618 p.
pulsed laser deposition, ferroelectric PZT film, electro-optic effect, Pockels cell, thin-films, crystal
IdentifiersURN: urn:nbn:se:kth:diva-23053ISI: 000187625200011OAI: oai:DiVA.org:kth-23053DiVA: diva2:341751
QC 201005252010-08-102010-08-10Bibliographically approved