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Comparative characteristics of Na0.5K0.5NbO3 films on Pt by pulsed laser deposition and magnetron sputtering
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2003 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 55, 769-779 p.Article in journal (Refereed) Published
Abstract [en]

Ferroelectric Na0.5K0.5 NbO3 (NKN) thin films were grown on the Pt 80 Ir 20 polycrystalline substrates by pulsed laser deposition (PLD) and radio frequency-magnetron sputtering (RF) technique using the same stoichiometric Na0.5K0.5NbO3 ceramic target. X-ray diffraction proved both PLD- and RF-made Na0.5K0.5 NbO3/Pt80Ir20 films are single phase and have preferential c -axis orientation. Temperature dependence of dielectric permittivity reveals the presence of two phase transitions around 210 and 410degreesC. Capacitance vs. applied voltage C-V @ 100 kHz, I-V , and P-E hysteresis characteristics recorded for the vertical capacitive structures yielded loss tandelta = 0.026 and 0.016, tunability about 44.5 and 30% @ 100 kV/cm, Ohmic resistivity 6.7 x 10(12) and 0.2 x 10(12), remnant polarization 11.7 and 9.7 muC/cm(2) , coercive field 28.0 and 94.6 kV/cm for PLD- and RF-films, respectively. Piezoelectric test carried out in hydrostatic conditions showed piezoelectric coefficient d H = 21 for PLD-NKN and 15 pC/N for RF-NKN film.

Place, publisher, year, edition, pages
2003. Vol. 55, 769-779 p.
Keyword [en]
Na0.5K0.5NbO3 (NKN) films, pulsed laser deposition (PLD), RF-magnetron sputtering, tunability, K-factor, leakage current, piezoelectric coefficient d(H)
URN: urn:nbn:se:kth:diva-23055ISI: 000187625800003OAI: diva2:341753
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Khartsev, SergiyGrishin, Alexander M.
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