Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Processing and properties of ferroelectric Pb(Zr,Ti)O-3/silicon carbide field-effect transistor
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
Show others and affiliations
2003 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 57, 1221-1231 p.Article in journal (Refereed) Published
Abstract [en]

Metal-ferroelectric-(insulator)-semiconductor MF(I)S structures have been fabricated and the properties of pulsed laser-deposited PZT/Al-2 O-3 gate stacks have been studied on n - and p -type 4H-SiC. Among several polytypes of SiC, 4H-SiC is considered as the most attractive one because of its wider bandgap (E-g congruent to 3.2 eV) as well as higher and more isotropic bulk mobility than other polytypes. Single PZT phase without a preferred orientation was confirmed by x-ray diffraction. The interface trap densities N-IT , fixed oxide charges Q(F) , and trapped oxide charges Q HY have been estimated by C-V curves with and without photo-illuminated measurements at room temperature. It is found that the charge injection from SiC is the dominant mechanism for C-V hysteresis. Importantly, with PZT/Al-2 O-3 gate stacks, superior C-V characteristics with negligible sweep rate dependence and negligible time dependence under the applied bias were obtained compared to PZT directly deposited on SiC. The MFIS structures exhibited very stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm(2) , tan delta similar to 0.0007 at 400 kHz) and memory window as wide as 10 V, when 5 nm-thick Al2O3 was used as a high bandgap (E-g similar to 9 eV) barrier buffer layer between PZT (E-g similar to 3.5 eV) and SiC (E-g similar to 3.2 eV). The structures have shown excellent electrical properties promising for the gate stacks as the SiC field-effect transistors (FETs). Depletion mode transistors were prepared by forming a Pb(Zr-0.52 Ti-0.48 )O-3 /Al-2 O-3 gate stack on 4H-SiC. Based on this structure, ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films have been integrated on 4H-silicon carbide (SiC) in a SiC field-effect transistor process. Nonvolatile operation of ferroelectric-gate field-effect transistors in silicon carbide (SiC) is demonstrated.

Place, publisher, year, edition, pages
2003. Vol. 57, 1221-1231 p.
Keyword [en]
field-effect transistor, pulsed laser deposition, silicon carbide, PZT, electrical characteristics, band offsets, memory, retention, devices, growth
Identifiers
URN: urn:nbn:se:kth:diva-23056ISI: 000187626400008OAI: oai:DiVA.org:kth-23056DiVA: diva2:341754
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Khartsev, SergiyZetterling, Carl-Mikael

Search in DiVA

By author/editor
Khartsev, SergiyZetterling, Carl-MikaelGrishin, Alexander M.Östling, Mikael
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Integrated Ferroelectrics

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 44 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf