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Structural, electrical, and optical analysis of ion implanted semi-insulating InP
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 2, 477-482 p.Article in journal (Refereed) Published
Abstract [en]

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.

Place, publisher, year, edition, pages
2004. Vol. 95, no 2, 477-482 p.
Keyword [en]
spreading resistance microscopy, scanning capacitance microscopy, n-type, gaas, temperatures, layers, fe
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-23059DOI: 10.1063/1.1633349ISI: 000187659600011ScopusID: 2-s2.0-0742303030OAI: diva2:341757
QC 20100525 QC 20111031Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-31Bibliographically approved

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Douhéret, OlivierMaknys, KestutisAnand, Srinivasan
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