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Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 1, 25-27 p.Article in journal (Refereed) Published
Abstract [en]

The analysis of the white photoluminescence (PL) from Si+ and C+ coimplanted SiO2 is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1-2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50-70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important.

Place, publisher, year, edition, pages
2004. Vol. 84, no 1, 25-27 p.
Keyword [en]
silicon nanocrystals, thermal sio2-films, porous silicon, luminescence, emission, layers
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-23064DOI: 10.1063/1.1634692ISI: 000187717600009ScopusID: 2-s2.0-0942278027OAI: diva2:341762
QC 20100525 QC 20111031Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-12-01Bibliographically approved

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Marcinkevicius, SauliusGaleckas, AugustinasLinnros, Jan
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Microelectronics and Information Technology, IMIT
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ReferencesLink to record
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