Mechanisms of diffusion-enhanced thermal stability of Si/Si1-xGex/Si heterostructures grown by chemical vapor deposition
2004 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 261, no 1, 22-29 p.Article in journal (Refereed) Published
The thermal stability of doped Si/Si0.8Ge0.2/Si (n-p-n or p-n-p) structures grown by reduced pressure chemical vapor deposition has been studied in correlation with the dopant in- and out-diffusion, using high-resolution X-ray reciprocal lattice mapping and secondary ion mass spectrometry as the main characterization tools. Initially, by doping the strained Si0.8Ge0.2 layer with reasonable amounts of boron, phosphorus, or arsenic, the thermal stability of the structures is shown to be dramatically increased compared to intrinsic layers. Secondly, the results show that when the dopants are present only in the Si buffer and cap layers, intrinsic Si spacer layers are required to obtain a significant enhancement in the thermal stability. These spacers reduce the interfacial dopant concentration and act as barriers for direct injection of precipitates into the SiGe layers. Finally, p-n-p and n-p-n structures were studied showing a very good thermal stability, due to enhanced out-diffusion of dopants from the SiGe layer upon in-diffusion from the adjacent layers. By employing i-Si spacers, the boron out-diffusion in a n-p-n structure was reduced, giving rise to a degradation of the thermal stability of this structure.
Place, publisher, year, edition, pages
2004. Vol. 261, no 1, 22-29 p.
A1. high resolution X-ray diffraction, B1. germanium silicon compounds, B3. heterojunction semiconductor devices, epitaxial-base transistors, x-ray-diffraction, silicon, si, relaxation, phosphorus, defects, boron
IdentifiersURN: urn:nbn:se:kth:diva-23069DOI: 10.1016/j,jcrysgro.2003.09.015ISI: 000187781500004ScopusID: 2-s2.0-0344308257OAI: oai:DiVA.org:kth-23069DiVA: diva2:341767
QC 20100525 QC 201110312010-08-102010-08-102011-10-31Bibliographically approved