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RF bandpass filter design based on CMOS active inductors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)In: IEEE transactions on circuits and systems. 2, Analog and digital signal processing (Print), ISSN 1057-7130, E-ISSN 1558-125X, Vol. 50, no 12, 942-949 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, a second-order RF bandpass filter based on active inductor has been implemented in a 0.35 mum CMOS process. Issues related to the intrinsic quality factor and dynamic range of the CMOS active inductor are addressed. Tuned at 900 MHz with Q=40, the filter has 28-dB spurious-free-dynamic-range (SFDR) and total current consumption (including buffer stage) is 17 mA with 2.7-V power supply. Experimental results also show the possibility of using them to build higher order RF filter and voltage-controlled oscillator (VCO).

Place, publisher, year, edition, pages
2003. Vol. 50, no 12, 942-949 p.
Keyword [en]
active inductor, Q-enhancement, spurious-free-dynamic-range (SFDR)
Identifiers
URN: urn:nbn:se:kth:diva-23083DOI: 10.1109/tcsii.2003.820235ISI: 000187958000006OAI: oai:DiVA.org:kth-23083DiVA: diva2:341781
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Ismail, MohammedOlsson, Håkan
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