Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A comparison of extended defect formation induced by ion implantation in (0001) and (11(2)over-bar-0) 4H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, 132-136 p.Article in journal (Refereed) Published
Abstract [en]

We study the effect of substrate orientation on defect formation in 4H-SiC. Both (1 1 (2) over bar 0) and (0 0 0 1) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscattering and channeling and transmission electron microscopy in an attempt to understand the damage evolution and defect structures resulting from different crystal orientations. Secondary ion mass spectrometry (SIMS) was performed for P elemental profiling before and after annealing. We observe a significantly different damage accumulation in the two directions with a broader amorphous layer formed in the c-cut crystal compared to the a-cut crystal. The annealing of the damage results in a range of different defects including dislocation loops and voids in both a-cut and c-cut crystals. The SIMS profiles show in some cases distinct differences between the two crystal directions.

Place, publisher, year, edition, pages
2003. Vol. 340, 132-136 p.
Keyword [en]
ion implantation, silicon carbide, extended defects
Identifiers
URN: urn:nbn:se:kth:diva-23104ISI: 000188300200021OAI: oai:DiVA.org:kth-23104DiVA: diva2:341802
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Linnarsson, Margareta K.

Search in DiVA

By author/editor
Linnarsson, Margareta K.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Physica. B, Condensed matter

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 23 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf