Annealing study of a bistable defect in proton-implanted n-type 4H-SiC
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 340, 743-747 p.Article in journal (Refereed) Published
The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a dose of 1 X 10(12) cm(-2). One configuration of the bistable defect leads to two levels in the band gap, 0.42 eV (M-1) and 0.7-0.8 eV (M-3) below the conduction band edge (E-C), and another leads to one level (M-2) at E-C-0.7 eV. The defect can be switched back and forth between the two configurations by varying the applied bias and the sample temperature. Isochronal and isothermal annealing shows that the defect anneals out between 310 degrees C and 370 degrees C with a first-order kinetics process. The origin of the defect is not known but it is implantation-induced and a low-order complex.
Place, publisher, year, edition, pages
2003. Vol. 340, 743-747 p.
4H-SiC, DLTS, bistable, ion implantation, 4h silicon-carbide, chemical-vapor-deposition, epitaxial layers, centers
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23105DOI: 10.1016/j.physb.2003.09.151ISI: 000188300200154OAI: oai:DiVA.org:kth-23105DiVA: diva2:341803
QC 201005252010-08-102010-08-102010-10-28Bibliographically approved