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Electrical resistivity of acceptor carbon in GaAs
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 5, 2532-2535 p.Article in journal (Refereed) Published
Abstract [en]

The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 10(17) and 10(19) cm(-3). Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal-nonmetal transition was found to be about 10(18) cm(-3).

Place, publisher, year, edition, pages
2004. Vol. 95, no 5, 2532-2535 p.
Keyword [en]
semiconductors, conductivity, alloys, gan
Identifiers
URN: urn:nbn:se:kth:diva-23194ISI: 000189139600052OAI: oai:DiVA.org:kth-23194DiVA: diva2:341892
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Persson, Clas

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