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Electroluminescence of single silicon nanocrystals
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 9, 1459-1461 p.Article in journal (Refereed) Published
Abstract [en]

We report on measurements of room-temperature electroluminescence from single silicon nanocrystals. The electrically driven emission reveals typical characteristics of single-nanocrystal luminescence: the peak wavelength variations, narrowing of spectral bands, a high degree of linear polarization, and intensity fluctuations (blinking) observed on a scale of minutes. From the count rate statistics of individual nanocrystals, we conclude that the yield of radiative emission is as high as 19%. These findings may open a route to highly efficient all-silicon light emitters.

Place, publisher, year, edition, pages
2004. Vol. 84, no 9, 1459-1461 p.
Keyword [en]
quantum dots, porous si, luminescence, chromophores, microscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23207DOI: 10.1063/1.1655705ISI: 000189264100009Scopus ID: 2-s2.0-1642619666OAI: oai:DiVA.org:kth-23207DiVA: diva2:341905
Note

QC 20100525 QC 20111027

Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2016-12-20Bibliographically approved

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Linnros, Jan

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