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The effect of C on emitter-base design for a single-polysilicon SiGe: C HBT with an IDP emitter
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 224, no 1-4, 330-335 p.Article in journal (Refereed) Published
Abstract [en]

A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exhibits a high current gain (beta) of 1700 and a BVCEO of 1.8 V. The peak cutoff frequency (f(T)) and maximum oscillation frequency (f(MAX)) are 73 and 17 GHz, respectively. The effect of emitter overlap on f(T) was minimal, but it had a strong impact on dc performance. LOCOS opening size strongly impacted both ac and dc performance. In addition, the effect of carbon, base cap thickness, and rapid thermal anneal (RTA) temperature on the emitter-base (E-B) junction formation was studied.

Place, publisher, year, edition, pages
2004. Vol. 224, no 1-4, 330-335 p.
Keyword [en]
SiGe : C, HBT, IDP emitter, carbon
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23210DOI: 10.1016/j.apsusc.2003.08.061ISI: 000189273900067Scopus ID: 2-s2.0-1142304521OAI: oai:DiVA.org:kth-23210DiVA: diva2:341908
Note
QC 20100525 QC 20111019Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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