Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
2004 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 224, no 1-4, 336-340 p.Article in journal (Refereed) Published
Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.
Place, publisher, year, edition, pages
2004. Vol. 224, no 1-4, 336-340 p.
SiGeC, HBT, bipolar, selective epitaxial growth, chemical-mechanical polishing, leakage, epitaxy, si
IdentifiersURN: urn:nbn:se:kth:diva-23211DOI: 10.1016/j.apsusc.2003.08.062ISI: 000189273900068ScopusID: 2-s2.0-1142304515OAI: oai:DiVA.org:kth-23211DiVA: diva2:341909
QC 20100525 QC 201110192010-08-102010-08-102011-10-28Bibliographically approved