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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 224, no 1-4, 336-340 p.Article in journal (Refereed) Published
Abstract [en]

Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.

Place, publisher, year, edition, pages
2004. Vol. 224, no 1-4, 336-340 p.
Keyword [en]
SiGeC, HBT, bipolar, selective epitaxial growth, chemical-mechanical polishing, leakage, epitaxy, si
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23211DOI: 10.1016/j.apsusc.2003.08.062ISI: 000189273900068Scopus ID: 2-s2.0-1142304515OAI: oai:DiVA.org:kth-23211DiVA: diva2:341909
Note
QC 20100525 QC 20111019Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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Suvar, ErdalHaralson, ErikRadamson, Henry H.Wang, Yong-BinGrahn, Jan V.Malm, B. GunnarÖstling, Mikael
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Microelectronics and Information Technology, IMIT
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